Related products

• Transistors & Mosfet

  2SC828 Bipolar Transistor

  

  Transistors & Mosfet

  2SC828 Bipolar Transistor

  0 out of 5

  (0)

  • Type – NPN
  • Collector-Emitter Voltage: 25 V
  • Collector-Base Voltage: 30 V
  • Emitter-Base Voltage: 7 V
  • Collector Current: 0.05 A
  • Collector Dissipation – 0.4 W
  • DC Current Gain (h_fe) – 130 to 520
  • Transition Frequency – 220 MHz
  • Noise Figure – 6 dB
  • Operating and Storage Junction Temperature Range -55 to +150 °C
  • Package – TO-92

  SKU: n/a

  ₨ 29

  Add to cart
• Transistors & Mosfet

  BC557

  

  Transistors & Mosfet

  BC557

  0 out of 5

  (0)

  • Package Type: TO-92
  • Transistor Type: PNP
  • Max Collector Current(I_C): -100mA
  • Max Collector-Emitter Voltage (V_CE): -45V
  • Max Collector-Base Voltage (V_CB): -50V
  • Max Emitter-Base Voltage (VBE): -5V
  • Max Collector Dissipation (Pc): 500 Milliwatt
  • Max Transition Frequency (fT): 100 MHz
  • Minimum & Maximum DC Current Gain (h_FE): 125 to 800
  • Max Storage & Operating temperature Should be: -65 to +150Centigrade

  SKU: n/a

  ₨ 8

  Add to cart
• Transistors & Mosfet

  TIP122 – Darlington Transistor (Original)

  

  Transistors & Mosfet

  TIP122 – Darlington Transistor (Original)

  0 out of 5

  (0)

  • Darlington medium-power NPN Transistor
  • High DC Current Gain (hFE), typically 1000
  • Continuous Collector current (IC) is 5A
  • Collector-Emitter voltage (VCE) is 100 V
  • Collector-Base voltage (VCB) is 100V
  • Emitter Base Voltage (VBE) is 5V
  • Base Current(IB) is 120mA
  • Type NPN
  • Collector-Emitter Voltage: 100V
  • Collector-Base Voltage: 100V
  • Emitter-Base Voltage: 5V
  • Collector Current: 5A
  • Collector Dissipation: 65W
  • DC Current Gain (h_fe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150C
  • Package: TO-220

  SKU: n/a

  ₨ 103

  Add to cart
• Transistors & Mosfet

  BD140 General Purpose PNP Epitaxial Silicon Transistor

  

  Transistors & Mosfet

  BD140 General Purpose PNP Epitaxial Silicon Transistor

  0 out of 5

  (0)

  • Bi-Polar PNP Transistor
  • Continuous Collector current (IC) is -1.5A
  • Collector-Emitter voltage (VCE) is- 80 V
  • Collector-Base voltage (VCB) is- 80V
  • Base Current (Ib) is -0.5A
  • Emitter Base Breakdown Voltage (VBE) is -5V
  • DC current gain (hfe) is 40 to 160
  • Available in To-225 and SOT-32 Package
  • Collector Dissipation: 12.5 W
  • Operating Junction Temperature Max (Tj): 150°C

  SKU: n/a

  ₨ 42

  Add to cart