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2SA1941 Bipolar Transistor


2SA1941 bipolar transistor p-n-p type transistor. Collector-Emitter Voltage: -140 V Collector-Base Voltage: -140 V Emitter-Base Voltage: -5 V Collector Current: -10 A Collector Dissipation – 100 W DC Current Gain (hfe) – 55 to 160 Transition Frequency – 30 MHz Operating and Storage Junction Temperature Range -55 to +150 ?C

 80  104

Attribute Value
Transistor Type PNP
Maximum DC Collector Current -10 A
Maximum Collector Emitter Voltage -140 V
Package Type TO-3PN
Mounting Type Through Hole
Maximum Power Dissipation 100 W
Minimum DC Current Gain 55
Transistor Configuration Single
Maximum Collector Base Voltage 140 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 30 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Dimensions 19 x 15.9 x 4.8mm

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