Transistors & Mosfet
IRF630 Power Mosfet
N-Channel Power MOSFET provide the circuit designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
₨ 57
Features of IRF630N MOSFET:
- Extremely high dv/dt capability
- Very low intrinsic capacitances
- Gate charge minimized
- VDSDrain-source voltage (VGS= 0) 200 V
- VDGRDrain-gate voltage (RGS= 20 k) 200 V
- IDDrain current (continuous) at TC=100 DegreeC 5.7A
- PTOTTotal dissipation at TC= 25 DegreeC 75W
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