Transistors & Mosfet
Showing 1–24 of 56 results
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Transistors & Mosfet
20N60 N-Channel Power Mosfet Transistor
20N60 belongs to the family of N-channel MOSFET. Its basically a power MOSFET that means it can handle certain levels of power. Its working principle is based on UTC technology. It provides the fast switching application and the minimum on state resistance as well. handling of high current, high speed of switching and low on sate resistance are its major features. Its real life applications include servo motor drivers, UPS, speed control of AC motor and many more.
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Transistors & Mosfet
2N2219 – NPN Transistor
- Small Signal NPN Transistor
- Current Gain (hFE), typically 50 for small signal
- Continuous Collector current (IC) is 800mA
- Collector-Emitter voltage (VCEO) is 50 V
- Collector-Base voltage (VCB0) is 75V
- Emitter Base Voltage (VBE0) is 6V
- Turn on time is 40ns
- Turn off time is 250ns
- Available in To-92 Package
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Transistors & Mosfet
2N2907 Bipolar PNP Transistor
Features and Technical Specification
- Having a high value of current (max. 600 mA)
- Low voltage value (max. 40 V)
- It comes in different types of packages TO-92, TO-18
- These are Lead (Pb) free devices
- Collector to Emitter voltage (VCEO) is 40v (max.)
- Collector to Base voltage (VCBO) is 60v (max.)
- Emitter to Base voltage(VEBO) is 5v (normally)
- The maximum value of Collector current is 600mA
- Power dissipation at ambient temperature is about 400mW
- Having DC current gain (hfe) of 100 to 300 (max.)
- The temperature of operation and storage is -65 to +150 C
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Transistors & Mosfet
2N3906 PNP Transistor
- Bi-Polar PNP Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 5mA maximum
- Collector Emitter Voltage (VCE) is 40V
- Collector Base Voltage (VCB) is 40V
- Available in To-92 Package
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Transistors & Mosfet
2N5401 PNP Transistor
2N5401 Features and Electrical Characteristics
- Available in Pb Free package
- High collector breakdown voltage
- With DC Current Gain (hFE) up to 100
- Maximum voltage across collector and emitter: 150V
- Maximum current allowed trough collector: 600mA
- Maximum voltage across collector and base: 160 V
- Maximum voltage across base and emitter: 5V
- Operating temperature range: -55C to +150C
- Maximum power dissipation: 0.62 W
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Transistors & Mosfet
2SA1013 Bipolar Transistor
- Type Designator: 2SA1013
- Material of transistor: Si
- Polarity: PNP
- Maximum collector power dissipation (Pc), W: 0.9
- Maximum collector-base voltage Ucb, V: 160
- Maximum collector-emitter voltage Uce, V: 160
- Maximum emitter-base voltage Ueb, V: 6
- Maximum collector current Ic max, A: 2
- Maksimalna temperatura (Tj), °C: 125
- Transition frequency (ft), MHz: 15
- Collector capacitance (Cc), pF: 35
- Forward current transfer ratio (hFE), min: 60
- Noise Figure, dB: –
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Transistors & Mosfet
2SA1941 Bipolar Transistor
2SA1941 bipolar transistor p-n-p type transistor. Collector-Emitter Voltage: -140 V Collector-Base Voltage: -140 V Emitter-Base Voltage: -5 V Collector Current: -10 A Collector Dissipation – 100 W DC Current Gain (hfe) – 55 to 160 Transition Frequency – 30 MHz Operating and Storage Junction Temperature Range -55 to +150 ?C
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Transistors & Mosfet
2SC2331 Bipolar Transistor
- Type Designator: 2SC2331
- Material of transistor: Si
- Polarity: NPN
- Maximum collector power dissipation (Pc), W: 1
- Maximum collector-base voltage |Ucb|, V: 80
- Maximum collector-emitter voltage |Uce|, V: 60
- Maximum emitter-base voltage |Ueb|, V: 8
- Maximum collector current |Ic max|, A: 0.7
- Transition frequency (ft), MHz: 30
- Collector capacitance (Cc), pF: 8
- Forward current transfer ratio (hFE), min: 40
- Noise Figure, dB: –
- Package of 2SC2331 transistor: TO92
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Transistors & Mosfet
2SC5198 Bipolar Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 140 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 55 to 160
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
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Transistors & Mosfet
2SC828 Bipolar Transistor
- Type – NPN
- Collector-Emitter Voltage: 25 V
- Collector-Base Voltage: 30 V
- Emitter-Base Voltage: 7 V
- Collector Current: 0.05 A
- Collector Dissipation – 0.4 W
- DC Current Gain (hfe) – 130 to 520
- Transition Frequency – 220 MHz
- Noise Figure – 6 dB
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-92
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Transistors & Mosfet
2SD313 Bipolar Transistor
- Type –NPN
- Collector-Emitter Voltage: 60V
- Collector-Base Voltage: 60V
- Emitter-Base Voltage: 5V
- Collector Current: 3A
- Collector Dissipation – 30W
- DC Current Gain (hfe) –40 to 320
- Transition Frequency – 5 MHz
- Operating and Storage Junction Temperature Range -55 to +150C
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Transistors & Mosfet
8N60 N-Channel Power Mosfet Transistor
- 8N60 N-Channel Power Mosfet Transistor
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss= typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25
- Drain Source Voltage: VDSS= 600V
- Static Drain-Source On-Resistance: RDS(on)< 1.2
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Transistors & Mosfet
A1015 PNP Transistor
The main use is for audio frequency amplifier applications. It can also be used for the switching purpose just like other PNP transistors. When use as an Audio frequency general purpose amplifier, can be operated in the active region. This transistor is further divided into four groups according to the DC current gain, O, Y, G, and L and has 140, 240, 400 and 700 hfe DC current gain respectively.
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Transistors & Mosfet
BC108
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 900 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 10mA maximum
- Available in TO-18 Metal Can Package
- Maximum Collector-Base Voltage |Vcb|: 30 V’
- Collector Dissipation: 0.3 W
- Transition Frequency:150 MHz
- Operating Junction Temperature Max (Tj): 175 °C
- Noise Figure – 2 dB
- Operating and Storage Junction Temperature Range -65 to +175 °C
- Collector Capacitance 5pF
SKU: n/a
