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C945 Bipolar Transistor
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Transistors & Mosfet
10N60 N-Channel Mosfet Transistor
- Drain Current ID= 9.2A@ TC=25
- Drain Source Voltage : VDSS= 650V(Min)
- Static Drain-Source On-Resistance: RDS(on) = 0.83(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
₨ 145
10N60 N-Channel Mosfet Transistor
FEATURES
- Drain Current ID= 9.2A@ TC=25
- Drain Source Voltage : VDSS= 650V(Min)
- Static Drain-Source On-Resistance: RDS(on) = 0.83(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
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Transistors & Mosfet
BC108
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 900 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 10mA maximum
- Available in TO-18 Metal Can Package
- Maximum Collector-Base Voltage |Vcb|: 30 V’
- Collector Dissipation: 0.3 W
- Transition Frequency:150 MHz
- Operating Junction Temperature Max (Tj): 175 °C
- Noise Figure – 2 dB
- Operating and Storage Junction Temperature Range -65 to +175 °C
- Collector Capacitance 5pF
SKU: n/a
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