Features
- General-purpose NPN Transistor
- High DC Current Gain (hFE), typically 80 when IC=10mA
- Continuous Collector current (IC) is 500mA
- Collector-Emitter voltage (VCE) is 40 V
- Collector-Base voltage (VCB) is 60V
- Emitter Base Breakdown Voltage (VBE) is 6V
- The transition Frequency is 100MHz
1S 500mA Battery
1S 350mA battery
LiPo 11.1V 3S 2200mAH
TIP122 - Darlington Transistor (Original) 



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