BC337 Subtotal: ₨ 10
Transistors & Mosfet
2N5551 NPN Transistor
2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. The transistor is commonly used for amplification of audio or other low power signals.
₨ 10
- NPN Type
- Used in amplifier applications
- V(CBO): 180V
- V(CEO): 160V
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- Package Type: TO-92
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- Max Collector Current(IC): -100mA
- Max Collector-Emitter Voltage (VCE): -45V
- Max Collector-Base Voltage (VCB): -50V
- Max Emitter-Base Voltage (VBE): -5V
- Max Collector Dissipation (Pc): 500 Milliwatt
- Max Transition Frequency (fT): 100 MHz
- Minimum & Maximum DC Current Gain (hFE): 125 to 800
- Max Storage & Operating temperature Should be: -65 to +150Centigrade
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Transistors & Mosfet
BD140 General Purpose PNP Epitaxial Silicon Transistor
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- Continuous Collector current (IC) is -1.5A
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- Collector-Base voltage (VCB) is- 80V
- Base Current (Ib) is -0.5A
- Emitter Base Breakdown Voltage (VBE) is -5V
- DC current gain (hfe) is 40 to 160
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