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2SC5198 Bipolar Transistor
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Transistors & Mosfet
2N5551 NPN Transistor
2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. The transistor is commonly used for amplification of audio or other low power signals.
₨ 10
- NPN Type
- Used in amplifier applications
- V(CBO): 180V
- V(CEO): 160V
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C945 Bipolar Transistor
- 2sc925 well known as C945 NPN transistor.
- Max Voltage Collector Emmiter=50 V.
- Max Collector current=150 mA.
- Collector power dissipation: 400 mW.
- Japanese High-frequency amplifier NPN Transistor.
- Current Gain (hFE) is 70 to 700 (high linearity).
- Continuous Collector current (IC) is 150mA.
- Collector-Emitter voltage (VCEO) is 50 V.
- Collector-Base voltage (VCB0) is 60V.
- Emitter Base Voltage (VBE0) is 5V.
- Transition Frequency is 150MHz.
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Transistors & Mosfet
2SC5198 Bipolar Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 140 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 55 to 160
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
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Transistors & Mosfet
2SC828 Bipolar Transistor
- Type – NPN
- Collector-Emitter Voltage: 25 V
- Collector-Base Voltage: 30 V
- Emitter-Base Voltage: 7 V
- Collector Current: 0.05 A
- Collector Dissipation – 0.4 W
- DC Current Gain (hfe) – 130 to 520
- Transition Frequency – 220 MHz
- Noise Figure – 6 dB
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-92
SKU: n/a
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