2SA1013 Bipolar Transistor

2SA1013 Bipolar Transistor

  • Type Designator: 2SA1013
  • Material of transistor: Si
  • Polarity: PNP
  • Maximum collector power dissipation (Pc), W: 0.9
  • Maximum collector-base voltage Ucb, V: 160
  • Maximum collector-emitter voltage Uce, V: 160
  • Maximum emitter-base voltage Ueb, V: 6
  • Maximum collector current Ic max, A: 2
  • Maksimalna temperatura (Tj), °C: 125
  • Transition frequency (ft), MHz: 15
  • Collector capacitance (Cc), pF: 35
  • Forward current transfer ratio (hFE), min: 60
  • Noise Figure, dB: –

₨ 41

  • Type –PNP
  • Collector-Emitter Voltage: -160V
  • Collector-Base Voltage:-160V
  • Emitter-Base Voltage:-6V
  • Collector Current:-1A
  • Collector Dissipation –9W
  • DC Current Gain (hfe) –60 to 200
  • Transition Frequency –50MHz
  • Operating and Storage Junction Temperature Range -55 to +150C
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