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COB LED Light 2W injection Module Yellow 12V
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2SC2625 Bipolar Transistor
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Subtotal: ₨ 108
Transistors & Mosfet
2SA1013 Bipolar Transistor
- Type Designator: 2SA1013
- Material of transistor: Si
- Polarity: PNP
- Maximum collector power dissipation (Pc), W: 0.9
- Maximum collector-base voltage Ucb, V: 160
- Maximum collector-emitter voltage Uce, V: 160
- Maximum emitter-base voltage Ueb, V: 6
- Maximum collector current Ic max, A: 2
- Maksimalna temperatura (Tj), °C: 125
- Transition frequency (ft), MHz: 15
- Collector capacitance (Cc), pF: 35
- Forward current transfer ratio (hFE), min: 60
- Noise Figure, dB: –
₨ 41
- Type –PNP
- Collector-Emitter Voltage: -160V
- Collector-Base Voltage:-160V
- Emitter-Base Voltage:-6V
- Collector Current:-1A
- Collector Dissipation –9W
- DC Current Gain (hfe) –60 to 200
- Transition Frequency –50MHz
- Operating and Storage Junction Temperature Range -55 to +150C
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Transistors & Mosfet
TIP122 – Darlington Transistor (Original)
- Darlington medium-power NPN Transistor
- High DC Current Gain (hFE), typically 1000
- Continuous Collector current (IC) is 5A
- Collector-Emitter voltage (VCE) is 100 V
- Collector-Base voltage (VCB) is 100V
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 120mA
- Type NPN
- Collector-Emitter Voltage: 100V
- Collector-Base Voltage: 100V
- Emitter-Base Voltage: 5V
- Collector Current: 5A
- Collector Dissipation: 65W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150C
- Package: TO-220
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Transistors & Mosfet
2SC2331 Bipolar Transistor
- Type Designator: 2SC2331
- Material of transistor: Si
- Polarity: NPN
- Maximum collector power dissipation (Pc), W: 1
- Maximum collector-base voltage |Ucb|, V: 80
- Maximum collector-emitter voltage |Uce|, V: 60
- Maximum emitter-base voltage |Ueb|, V: 8
- Maximum collector current |Ic max|, A: 0.7
- Transition frequency (ft), MHz: 30
- Collector capacitance (Cc), pF: 8
- Forward current transfer ratio (hFE), min: 40
- Noise Figure, dB: –
- Package of 2SC2331 transistor: TO92
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Transistors & Mosfet
2SC5198 Bipolar Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 140 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 55 to 160
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
SKU: n/a
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