2SC1383 Bipolar Transistor C1383 Bipolar Transistor

• Bi-Polar NPN Transistor
• DC Current Gain (hFE) is 900 maximum
• Continuous Collector current (IC) is 200mA
• Emitter Base Voltage (VBE) is 5V
• Base Current(IB) is 10mA maximum
• Available in TO-18 Metal Can Package
• Maximum Collector-Base Voltage |Vcb|: 30 V’
• Collector Dissipation: 0.3 W
• Transition Frequency:150 MHz
• Operating Junction Temperature Max (Tj): 175 °C
• Noise Figure – 2 dB
• Operating and Storage Junction Temperature Range -65 to +175 °C
• Collector Capacitance 5pF

This is the BC337, an NPN silicon BJT (Bipolar Junction Transistor). This little transistor can help in your project by being used to help drive large loads or amplifying or switching applications. The BC337 is specifically rated at 50V and 800mA max.