2SC828 Bipolar Transistor

2SC828 Bipolar Transistor

  • Type – NPN
  • Collector-Emitter Voltage: 25 V
  • Collector-Base Voltage: 30 V
  • Emitter-Base Voltage: 7 V
  • Collector Current: 0.05 A
  • Collector Dissipation – 0.4 W
  • DC Current Gain (hfe) – 130 to 520
  • Transition Frequency – 220 MHz
  • Noise Figure – 6 dB
  • Operating and Storage Junction Temperature Range -55 to +150 °C
  • Package – TO-92

₨ 29

2SC828 bipolar transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations

Characteristics of the 2SC828 bipolar transistor

  • Type – NPN
  • Collector-Emitter Voltage: 25 V
  • Collector-Base Voltage: 30 V
  • Emitter-Base Voltage: 7 V
  • Collector Current: 0.05 A
  • Collector Dissipation – 0.4 W
  • DC Current Gain (hfe) – 130 to 520
  • Transition Frequency – 220 MHz
  • Noise Figure – 6 dB
  • Operating and Storage Junction Temperature Range -55 to +150 °C
  • Package – TO-92
Category:

Based on 0 reviews

0.0 overall
0
0
0
0
0

Be the first to review “2SC828 Bipolar Transistor”

There are no reviews yet.

Related products