2SD313 Bipolar Transistor

Type –NPN
Collector-Emitter Voltage: 60V
Collector-Base Voltage: 60V
Emitter-Base Voltage: 5V
Collector Current: 3A
Collector Dissipation – 30W
DC Current Gain (h_fe) –40 to 320
Transition Frequency – 5 MHz
Operating and Storage Junction Temperature Range -55 to +150C

Description
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2SD313 package

The medium-power 2SD313 transistor has a TO-220 package, it is used for higher-level applications.

TO-220 package is made of epoxy/plastic material for higher temperature capacity and compactness.

TO-220 is a bulkier through-hole package, so we can easily attach a heat sink with it for an excessive heat transferring method.

2SD313 transistor electrical specification & application description

Here in this section, we describe the electrical specifications of the 2SD313 transistor, this is very useful for a better understanding of the transistor, and this information is also useful for the replacement process.

Voltage specs

The voltage specs of the 2SD313 transistor are a collector-to-emitter voltage is 60V, a collector-to-base voltage is 60V, and an emitter-to-base voltage is 5V, the voltage specifications show that it is an amplification and switching circuit.

The collector-to-emitter saturation voltage value of the 2SD313 transistor is 1V, it is the switching voltage of the device.

Current specs

The collector current value of the 2SD313 transistor is 3A, it is the maximum load capacity of this device.

The pulsed collector current value of the 2SD313 transistor is 8A, it is the maximum current at pulsed condition.

The base current value of the 2SD313 transistor is 1A, it is the maximum switching current value of the device.

Dissipation specs

The dissipation value of the 2SD313 transistor is 30W, this value is mainly dependent on the device package.

DC current gain specs

The DC current gain value of the 2SD313 transistor is 40 to 320Hfe, this value is used for amplification circuit applications.

Transition frequency

The transition frequency value of the 2SD313 transistor is 5MHz, this value is applicable at the circuit level.

Maximum temperature value

The maximum temperature is a combination of junction temperature and storage temperature, the temperature value is between -55 to +150℃.

Thermal resistance

The thermal resistance value of the 2SD313 transistor is 4.16℃/W.