8N60 N-Channel Power Mosfet Transistor

8N60 N-Channel Power Mosfet Transistor

  • 8N60 N-Channel Power Mosfet Transistor
  • Ultra low gate charge ( typical 28 nC )
  • Low reverse transfer capacitance ( Crss= typical 12.0 pF )
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • Drain Current: ID= 7.5A at TC= 25
  • Drain Source Voltage: VDSS= 600V
  • Static Drain-Source On-Resistance: RDS(on)< 1.2

₨ 145

8N60 N-Channel Power Mosfet Transistor

SPECIFICATIONS:

  • 8N60 N-Channel Power Mosfet Transistor
  • Ultra low gate charge ( typical 28 nC )
  • Low reverse transfer capacitance ( Crss= typical 12.0 pF )
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • Drain Current: ID= 7.5A at TC= 25
  • Drain Source Voltage: VDSS= 600V
  • Static Drain-Source On-Resistance: RDS(on)< 1.2
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