IRF630 Power Mosfet

IRF630 Power Mosfet

N-Channel Power MOSFET provide the circuit designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

₨ 57

Features of IRF630N MOSFET:

  • Extremely high dv/dt capability
  • Very low intrinsic capacitances
  • Gate charge minimized
  • VDSDrain-source voltage (VGS= 0) 200 V
  • VDGRDrain-gate voltage (RGS= 20 k) 200 V
  • IDDrain current (continuous) at TC=100 DegreeC 5.7A
  • PTOTTotal dissipation at TC= 25 DegreeC 75W
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