IRF830 Power Mosfet

IRF830 Power Mosfet

This Power MOSFET provides the circuit designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

₨ 57

Amplify or switch electronic signals with ease with Jameco’s wide selection of MOSFET transistors. These IRF830 models have a variety of applications and offer high current, high-speed switching. Low profile and low on-resistance, these handy devices are found in many digital and analog circuits.

Specification Value
Package TO-220-3
Transistor Polarity N
Maximum Drain Source Voltage 500 V
Maximum Continuous Drain Current 4.5 A
Maximum Gate Source Voltage 20V
Power Dissipation 100 W
Number of Elements per Chip 1
Maximum Forward Voltage 500VDC
Output Power 100W
Peak Non-Repetitive Surge Current 18A
Maximum Reverse Current 50uA
Channel Mode N-Channel Enhancement
Peak Reverse Recovery Time 15ns
Channel Type N
Repetitive Peak Reverse Voltage 500VDC
Configuration Single
Maximum Drain Source Resistance 1.5 Ohms@10V
Category Power MOSFET
Maximum Forward Current 4.5A
Typical Fall Time 5ns
Typical Gate Charge @ Vgs 22nC@10V
Typical Input Capacitance @ Vds 610pF@25V
Typical Rise Time 8ns
Typical Turn-Off Delay Time 7ns
Typical Turn-On Delay Time 11.5ns
Minimum Operating Temperature -65C
Maximum Operating Temperature 150C
Mounting Through Hole
Packaging Bulk
Pins 3
Family IRF830
Width 4.6mm
Height 9.15mm
Product Length 10.4mm
Product Type MOSFET

 

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