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4" Tie Cable - Single Piece
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C945 Bipolar Transistor
1 × ₨ 29
Subtotal: ₨ 34
Transistors & Mosfet
TIP31C Power Transistor
The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications.
₨ 51
TIP31C Power Transistor
Specifications
- Medium power TRANSISTOR
- With hfe gain up to 50
- With hfe improved linearity
- Maximum voltage across COLLECTOR and EMITTER of TRANSISTOR: 100V
- Maximum current allowed trough TRANSISTOR COLLECTOR: 3A DC
- Maximum voltage across BASE and EMITTER of TRANSISTOR:5 V
- Maximum current allowed trough TRANSISTOR BASE: 1A DC
- Maximum voltage across COLLECTOR and BASE of TRANSISTOR: 100V
- Maximum operating Temperature: 150C
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Transistors & Mosfet
BF495
- Package Type: TO-92
- Transistor Type: NPN
- Max Collector Current(IC): 30mA
- Max Collector-Emitter Voltage (VCE): 20V
- Max Collector-Base Voltage (VCB): 30V
- Max Emitter-Base Voltage (VBE): 5V
- Max Collector Dissipation (Pc): 300 Milliwatt
- Max Transition Frequency (fT): 120 MHz
- Minimum & Maximum DC Current Gain (hFE): 35 to 125
- Max Storage, Operating & Junction temperature range: -65 to +150 Centigrade
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Transistors & Mosfet
TIP122 – Darlington Transistor (Original)
- Darlington medium-power NPN Transistor
- High DC Current Gain (hFE), typically 1000
- Continuous Collector current (IC) is 5A
- Collector-Emitter voltage (VCE) is 100 V
- Collector-Base voltage (VCB) is 100V
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 120mA
- Type NPN
- Collector-Emitter Voltage: 100V
- Collector-Base Voltage: 100V
- Emitter-Base Voltage: 5V
- Collector Current: 5A
- Collector Dissipation: 65W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150C
- Package: TO-220
SKU: n/a
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