TIP31C Power Transistor

TIP31C Power Transistor

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications.

₨ 51

TIP31C Power Transistor

Specifications

  • Medium power TRANSISTOR
  • With hfe gain up to 50
  • With hfe improved linearity
  • Maximum voltage across COLLECTOR and EMITTER of TRANSISTOR: 100V
  • Maximum current allowed trough TRANSISTOR COLLECTOR: 3A DC
  • Maximum voltage across BASE and EMITTER of TRANSISTOR:5 V
  • Maximum current allowed trough TRANSISTOR BASE: 1A DC
  • Maximum voltage across COLLECTOR and BASE of TRANSISTOR: 100V
  • Maximum operating Temperature: 150C
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