TIP35C Power Transistor

TIP35C Power Transistor

  • Low saturation voltage
  • Simple drive requirements
  • High safe operating area
  • For low distortion complementary designs
  • Easy to carry and handle

₨ 61

TIP35C Power Transistor

TIP35C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

  • Low saturation voltage
  • Simple drive requirements
  • High safe operating area
  • For low distortion complementary designs
  • Easy to carry and handle

Detailed Specifications:-

Transistor Polarity NPN
Collector Emitter Voltage (VCEO) 100V
Collector Base Voltage (VCBO) 100V
Continuous Collector Current (Ic) 25A
Continuous Base Current (Ib) 5A
Emitter Base Voltage (VEBO) 5V
Power Dissipation (Pd) 125W
Operating Temperature Range -65 – 150C
DC Current Gain (hFE) 10-50
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